• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a laser diode, and more particularly, to a method for manufacturing a PBH laser diode used as a light emitting device of an optical communication system. PBH laser diode manufacturing method of the present invention comprises the steps of growing an n-InP layer, u-InGaAsP layer and n-InP layer on the n-InP substrate; And growing a protective layer on the p-InP layer.
    公开号:KR19980058445A
    申请号:KR1019960077769
    申请日:1996-12-30
    公开日:1998-10-07
    发明作者:김태진；오경석；조규석
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    PBH laser diode manufacturing method.
    The present invention relates to a laser diode, and more particularly, to a method for manufacturing a PBH laser diode used as a light emitting device of an optical communication system.
    In general, PBH (Planar Buried Heterostructure) is a device used as a light source in the optical signal source, the light source of the measurement equipment, and the information pointer in the optical communication system.
    After growing a stacked structure of a double heterostructure on the PBH laser diode n-InP substrate, a mesa-shaped pattern is formed through wet etching, and then a current is blocked by a second tertiary regrowth. It is formed by growing a layer and an ohmic contact layer.
    In detail, with reference to Figures 1A and 1B as follows.
    As shown in FIG. 1A, the n-InP layer 2, the active layer u-InGaAsP layer 3 and the p-InP layer on the n-substrate 1 using the MOCVD (Metal Organic Chemical Vapor Deposition) method. (4) is grown sequentially.
    Subsequently, as shown in FIG. 1B, a SiO 2 mask 5 for etching the stacks is formed on the p-InP layer 4, and the p-InP layer 4 is formed using a non-selective etching solution. , the u-InGaAsP layer 3 and the n-InP layer 2 are etched. At this time, the non-selective etching solution is faster than the longitudinal etching speed of the lateral etching speed, so that the laminated film is etched in mesa form.
    Then, a secondary tertiary regrowth process is performed to fabricate the PBH laser diode.
    However, in the prior art as described above, since the surface of the heterojunction structure is an InP layer susceptible to thermal damage, the p-InP layer is damaged during the Cool-Down process performed after growth is completed. In addition, when the SiO 2 film used as a mesa etching mask is deposited by PECVD, the InP layer is damaged, thereby degrading the performance of the PBH laser diode.
    Therefore, the present invention aims to provide a PBH laser diode manufacturing method which can prevent the device performance degradation due to surface layer damage by further growing an InGaAs layer for protecting the underlying layer on the p-InP layer.
    1A and 1B are cross-sectional views illustrating a method for manufacturing a PBH laser diode according to the prior art.
    2A to 2C are cross-sectional views illustrating a method for manufacturing a PBH laser diode according to the present invention.
    Explanation of symbols on the main parts of the drawings
    11: n-substrate, 12: n-InP layer, 13: p-InGaAsP, 14: p-InP layer, 15: protective layer, 16: SiO2 mask.
    The above object is to grow an n-InP layer, a u-InGaAsP layer and a p-InP layer on the n-InP substrate; And it is achieved by the PBH laser diode manufacturing method according to the invention, comprising the step of growing a protective layer on the p-InP layer.
    According to the present invention, by growing a protective layer on the p-InP layer, it is possible to prevent the device from deteriorating due to surface damage.
    EXAMPLE
    Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to FIGS. 2A to 2C.
    Referring to FIG. 2A, after the n-InP layer 12, the active layer u-InGaAsP layer 13, and the p-InP layer 14 are sequentially grown on the n-InP substrate 11 by MOCVD, The InGaAs layer 15 is grown on the p-InP layer 14 as a protective layer for protecting the lower layer. Then, PH 3 gas is injected into the reaction chamber as an atmospheric gas to perform a cool-down process. At this time, due to the InGaAs layer 15, surface damage of the p-InP layer 14 is prevented.
    Referring to FIG. 2B, the SiO ₂ layer 16 is formed on the InGaAs layer 15 as a mesa etching mask by PECVD, and the p-InP layer 14 and the u-InGaAsP layer (using a non-selective etching solution) are formed. 13) and n-InP layer 12 are etched.
    Referring to FIG. 2C, the SiO 2 layer 16 and the InGaAs layer 15 are removed and a well-known subsequent process, for example, secondary and tertiary regrowth processes, is performed to fabricate a PBH laser diode. Here, the InGaAs layer 15 is etched for a time corresponding to the growth thickness using a solution of H 2 SO 4 : H 2 O 2 : H 2 O = 3: 1: 1 which is a selective etching etchant before the tertiary regrowth process. To remove it.
    As described above, the PBH laser diode manufacturing method of the present invention further grows the InGaAs layer as a protective layer for protecting the lower layer on top of the heterojunction structure, thereby preventing damage in subsequent processes to prevent performance degradation of the device. In this way, it is possible to improve the production yield of the PBH laser diode,
    Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] growing an n-InP layer, a u-InGaAsP layer, and a p-InP layer on the n-InP substrate; And growing a protective layer on the p-InP layer.
    [2" claim-type="Currently amended] The method of claim 2, wherein the protective layer is an InGaAs layer.
    [3" claim-type="Currently amended] The method of claim 2, wherein the removing of the protective layer is performed by etching using a selective etching solution consisting of H 2 SO 4 , H 2 O 2, and H 2 O. 4 .
    [4" claim-type="Currently amended] The method of claim 3, wherein the selective etching solution is H 2 SO 4 : H 2 O 2 : H 2 O = 3: 1: 1.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-30|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-30|Priority to KR1019960077769A
    1998-10-07|Publication of KR19980058445A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960077769A|KR19980058445A|1996-12-30|1996-12-30|PBH laser diode manufacturing method|
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